WebThe IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI.
IRFB4020PBF Infineon Technologies Discrete …
WebThe IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. … WebIRFB4020PBF Infineon / IR MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud datasheet, inventory, & pricing. Skip to Main Content (800) 346-6873. Contact Mouser (Kitchener) (800) 346-6873 Feedback. Change Location. English. Français; CAD $ CAD $ USD Canada. Please confirm your currency selection: chisholm trail transportation fort worth tx
IRFB4020PBF - Infineon - Power MOSFET, N Channel, 200 V
WebView datasheets for IRFB4020PBF Datasheet by Infineon Technologies and other related components here. IRFB4020PBF Datasheet by Infineon Technologies Digi-Key … WebIRFB4020PBF Newark Part No.: 61M6831 Technical Datasheet: IRFB4020PBF Datasheet See all Technical Docs Product Information Transistor Polarity: N Channel Channel Type: N Channel Continuous Drain Current Id: 18A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.1ohm On Resistance Rds (on): 0.1ohm Rds (on) Test Voltage: 10V WebApr 8, 2024 · IRFB4020PBF Infineon Technologies MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud datasheet, inventory & pricing. Skip to Main Content 080 42650000 Contact Mouser (Bangalore) 080 42650000 Feedback Change LocationEnglishINR ₹ INR $ USD India Please confirm your currency selection: Indian Rupee Incoterms:FCA (Shipping Point) graph of 10 year treasury yield